 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Semiconductor RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49230. BRAND RFH25P08 RFH25P10 RFK25P08 RFK25P10 G September 1998 Features * -25A, -100V and -80V * rDS(ON) = 0.150 [ /Title (RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10) /Subject -25A, 00V, 0V, .150 hm, Phannel ower OSETs) /Author ) /Keyords (5A, 00V a0V, .150 hm, Phannel ower OSETs) /Creator ) /DOCIN O pdfark * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFH25P08 RFH25P10 RFK25P08 RFK25P10 PACKAGE TO-218AC TO-218AC TO-204AE TO-204AE Symbol D NOTE: When ordering, use the entire part number. S Packaging JEDEC TO -218AC JEDEC TO-204AE DRAIN SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1632.1 6-1 RFH25P08, RFH25P10, RFK25P08, RFK25P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFH25P08 RFK25P08 -80 -80 -25 -60 20 150 1.2 -55 to 150 300 260 RFH25P10 RFK25P10 -100 -100 -25 -60 20 150 1.2 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 (for TO-218AC). . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V -80 -100 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS, VGS = 0 VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 125oC -2 VGS = 0V, VDS = -25V, f = 1MHz (Figure 9) RFK25P08, RFK25P10 35 165 270 165 -4 -1 -25 100 0.150 -3.75 50 250 400 250 3000 1500 600 0.83 V V V A A nA V ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFH25P08, RFK25P08 RFH25P10, RFK25P10 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0V ID = 25A, VGS = -10V, (Figures 6, 7) ID = -25A, VGS = -10V ID 12.5A, VDS = -50V, RGS = 50, VGS = -10V, RL = 4.0 (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = -12.5A ISD = -4A, dISD/dt = 100A/s MIN TYP 300 MAX -1.4 UNITS V ns 6-2 RFH25P08, RFH25P10, RFK25P08, RFK25P10 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0.8 Unless Otherwise Specified 30 25 20 15 10 5 0 25 0.6 0.4 0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 ID MAX CONTINUOUS ID, DRAIN CURRENT (A) TC = 25oC, TJ = MAX RATED 100 PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC VGS = -20V VGS = -10V 60 VGS = -8V 40 VGS = -7V VGS = -6V 20 VGS = -5V VGS = -4V 0 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 DC OPERATION VDSS(MAX) = -80V RFH25P08, RFK25P08 VDSS(MAX) = -100V RFH25P10, RFK25P10 -10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V) -1000 0.1 -1 ID, DRAIN CURRENT (A) 80 0 -2 -4 -6 -8 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 40 ON RESISTANCE () 30 rDS(ON), DRAIN TO SOURCE VDS = -10V PULSE DURATION = 80s DUTY CYCLE 2% TC = -40oC 25oC VGS = -10V PULSE DURATION = 80s 0.16 DUTY CYCLE 2% TC = 125oC 0.12 TC = 25oC TC = -40oC 0.20 20 125oC 0.08 10 125oC 0 0 -40oC 0.04 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) -10 0 10 20 30 40 50 ID, DRAIN CURRENT (A) FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6-3 RFH25P08, RFH25P10, RFK25P08, RFK25P10 Typical Performance Curves 4 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 25A VGS = -10V 3 Unless Otherwise Specified (Continued) NORMALIZED GATE THRESHOLD VOLTAGE 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 0 50 100 150 ID = 250A VGS = VDS 2 1 0 -50 0 50 100 150 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 4000 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 GATE SOURCE VOLTAGE VGS, GATE TO SOURCE VOLTAGE (V) BVDSS VDD = BVDSS 75 VDD = BVDSS 8 CRSS COSS C, CAPACITANCE (pF) 3000 CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 6 50 0.75BVDSS 0.50BVDSS 0.25BVDSS RL = 4 IG(REF) = 1.5mA VGS = -10V DRAIN SOURCE VOLTAGE 0 IG(REF) IG(ACT) IG(REF) IG(ACT) 0 2000 CISS 4 1000 COSS CRSS 25 2 0 0 -10 -20 -30 -40 -50 20 VDS, DRAIN TO SOURCE VOLTAGE (V) t, TIME (s) 80 NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL 0 10% tOFF td(OFF) tf 10% DUT VGS RG VDD + VDS VGS 0 90% 90% 10% 50% PULSE WIDTH 90% 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 6-4 |
Price & Availability of RFH25P08
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |